styn875 thru styn1875 thyristor discretes (scrs) a k g dimensions to-247ad symbol test conditions unit t vj =t vjm t c =85 o c; 180 o sine 75 48 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 540 580 480 500 a i tsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 1350 1300 1050 1030 a 2 s i 2 t (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =300us 10 5 w p gav 0.5 w i trms i tavm o c t vj t vjm t stg -40...+140 140 -40...+125 m d f c mounting torque (m3) mounting force with clip 0.8...1.2 20...120 nm n weight 6 g repetitive, it= 75a non repetitive, i t =i tavm t vj=tvjm f=50hz, t p =200us v d=2/3vdrm i g=0.3a di g/dt=0.3a/us v rgm 10 v maximum ratings typical sirectifier g a k k=cathode, a=anode, g=cate styn875 styn1275 styn1675 vrrm v 800 1200 1600 vrsm v 900 1300 1700 styn1875 1800 1900 STYN1075 1000 1100 p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
styn875 thru styn1875 symbol test conditions characteristic values unit v v t it=75a; t vj=25 o c 1.60 v to for power-loss calculations only (t vj =125 o c) 0.80 v r t 11 m v d =6v; t vj =25 o c t vj =-40 o c v gt 1.5 1.6 v v d =6v; t vj =25 o c t vj =-40 o c i gt 100 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.2 v i gd 10 ma i h t vj =25 o c; v d =6v; r gk = 100 ma tvj=25 o c; tp=10us; ig=0.3a; dig/dt=0.3a/us 150 ma i l dc current r thjc 0.60 k/w dc current r thjh 0.80 k/w a max. acceleration, 50 hz 50 m/s 2 i r , i d t vj =t vjm ; v r =v rrm ; v d =v drm 5 ma tvj=25 o c; vd=1/2v drm i g=0.3a; dig/dt=0.3a/us t gd 2 us typ. thyristor discretes (scrs) 0,01 0,1 1 200 250 300 350 400 450 0,5 1,0 1,5 2,0 0 20 40 60 80 100 i tsm [a] i t [a] 2 3 4 5 6 7 8 910 1 100 1000 10000 i 2 t [a 2 s] v t [v] fig. 1 forward characteristics t [ms] fig. 3 i 2 t versus time (1-10 ms) t [s] fig. 2 surge overload current t vj = 25c t vj = 125c t vj = 45c 50 hz, 80% v rrm t vj = 125c t vj = 45c v r = 0 v 125c 150c p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
styn875 thru styn1875 thyristor discretes (scrs) 10 0 10 1 10 2 10 3 10 4 0,0 0,1 0,2 0,3 0,4 z thjc [k/w] 80 dc = 1 60 0.5 0.4 0.33 0.17 0.08 40 20 0 0 25 50 100 125 150 i t(av)m [a] 75 t c [c] fig. 6 max. forward current at case temperature t [ms] fig. 8 transient thermal impedance junction to case 0 20 40 0 20 40 60 80 i t(av) [a] p (av) [w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 50 100 150 t amb [c] dc = 1 0.5 0.4 0.33 0.17 0.08 10 100 1000 1 10 100 1000 1 10 100 1000 10000 0,1 1 10 v g [v] t gd [s] typ. limit t vj = 125c i g [ma] fig. 4 gate trigger characteristics i g [ma] fig. 5 gate controlled delay time 6 4 5 2 1 3 1: i gd , t vj = 150c 2: i gt , t vj = 25c 3: i gt , t vj = -40c r thha 0.6 0.8 1 .0 2.0 4.0 8.0 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w r thi [k/w] t i [s] 0.0 44 0.011 0.039 0.0001 0.047 0.02 0.09 0.4 0.18 0.12 p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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